Bandgap broadening at grain boundaries in single-layer MoS2

被引:0
|
作者
Dongfei Wang
Hua Yu
Lei Tao
Wende Xiao
Peng Fan
Tingting Zhang
Mengzhou Liao
Wei Guo
Dongxia Shi
Shixuan Du
Guangyu Zhang
Hongjun Gao
机构
[1] Chinese Academy of Sciences,Institute of Physics & University of Chinese Academy of Sciences
[2] Beijing Institute of Technology,School of Physics
来源
Nano Research | 2018年 / 11卷
关键词
MoS; grain boundary; bandgap; scanning tunneling microscopy;
D O I
暂无
中图分类号
学科分类号
摘要
Two-dimensional semiconducting transition-metal dichalcogenides have attracted considerable interest owing to their unique physical properties and future device applications. In particular, grain boundaries (GBs) have been often observed in single-layer MoS2 grown via chemical vapor deposition, which can significantly influence the material properties. In this study, we examined the electronic structures of various GBs in single-layer MoS2 grown on highly oriented pyrolytic graphite using low-temperature scanning tunneling microscopy/spectroscopy. By measuring the local density of states of a series of GBs with tilt angles ranging from 0° to 25°, we found that the bandgaps at the GBs can be either broadened or narrowed with respect to the intrinsic single-layer MoS2. The bandgap broadening shows that the GBs can become more insulating, which may directly influence the transport properties of nanodevices based on polycrystalline single-layer MoS2 and be useful for optoelectronics.
引用
收藏
页码:6102 / 6109
页数:7
相关论文
共 50 条
  • [1] Bandgap broadening at grain boundaries in single-layer MoS2
    Wang, Dongfei
    Yu, Hua
    Tao, Lei
    Xiao, Wende
    Fan, Peng
    Zhang, Tingting
    Liao, Mengzhou
    Guo, Wei
    Shi, Dongxia
    Du, Shixuan
    Zhang, Guangyu
    Gao, Hongjun
    [J]. NANO RESEARCH, 2018, 11 (11) : 6102 - 6109
  • [2] SINGLE-LAYER MOS2
    JOENSEN, P
    FRINDT, RF
    MORRISON, SR
    [J]. MATERIALS RESEARCH BULLETIN, 1986, 21 (04) : 457 - 461
  • [3] Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
    Sangwan V.K.
    Jariwala D.
    Kim I.S.
    Chen K.-S.
    Marks T.J.
    Lauhon L.J.
    Hersam M.C.
    [J]. Nature Nanotechnology, 2015, 10 (5) : 403 - 406
  • [4] Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
    Sangwan, Vinod K.
    Jariwala, Deep
    Kim, In Soo
    Chen, Kan-Sheng
    Marks, Tobin J.
    Lauhon, Lincoln J.
    Hersam, Mark C.
    [J]. NATURE NANOTECHNOLOGY, 2015, 10 (05) : 403 - 406
  • [5] Bandgap tunability at single-layer molybdenum disulphide grain boundaries
    Huang, Yu Li
    Chen, Yifeng
    Zhang, Wenjing
    Quek, Su Ying
    Chen, Chang-Hsiao
    Li, Lain-Jong
    Hsu, Wei-Ting
    Chang, Wen-Hao
    Zheng, Yu Jie
    Chen, Wei
    Wee, Andrew T. S.
    [J]. NATURE COMMUNICATIONS, 2015, 6
  • [6] Bandgap tunability at single-layer molybdenum disulphide grain boundaries
    Yu Li Huang
    Yifeng Chen
    Wenjing Zhang
    Su Ying Quek
    Chang-Hsiao Chen
    Lain-Jong Li
    Wei-Ting Hsu
    Wen-Hao Chang
    Yu Jie Zheng
    Wei Chen
    Andrew T. S. Wee
    [J]. Nature Communications, 6
  • [7] Single-Layer MoS2 Electronics
    Lembke, Dominik
    Bertolazzi, Simone
    Kis, Andras
    [J]. ACCOUNTS OF CHEMICAL RESEARCH, 2015, 48 (01) : 100 - 110
  • [8] Single-Layer MoS2 Phototransistors
    Yin, Zongyou
    Li, Hai
    Li, Hong
    Jiang, Lin
    Shi, Yumeng
    Sun, Yinghui
    Lu, Gang
    Zhang, Qing
    Chen, Xiaodong
    Zhang, Hua
    [J]. ACS NANO, 2012, 6 (01) : 74 - 80
  • [9] Single-layer MoS2 transistors
    Radisavljevic, B.
    Radenovic, A.
    Brivio, J.
    Giacometti, V.
    Kis, A.
    [J]. NATURE NANOTECHNOLOGY, 2011, 6 (03) : 147 - 150
  • [10] Single-layer MoS2 transistors
    Radisavljevic B.
    Radenovic A.
    Brivio J.
    Giacometti V.
    Kis A.
    [J]. Nature Nanotechnology, 2011, 6 (3) : 147 - 150