Fast quasi-optical phase shifter based on the effect of induced photo conductivity in silicon

被引：0
|
作者：
A. A. Vikharev
G. G. Denisov
Vl. V. Kocharovsky
S. V. Kuzikov
V. V. Parshin
N. Yu. Peskov
A. N. Stepanov
D. I. Sobolev
M. Yu. Shmelev
机构：
[1] Institute of Applied Physics of the Russian Academy of Sciences,
来源：
Radiophysics and Quantum Electronics | 2007年 / 50卷
关键词：
Test Cavity; Microwave Pulse; Wave Beam; Silicon Plate; Microwave Beam;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We study, both numerically and experimentally, a microwave commutator (phase shifter), whose active element comprises a metal plane mirror with a semiconductor plate on it. Phase shifting of the reflected microwave beam is attained by creating a conducting layer in the semiconductor by a laser with quantum energy approximately equal to the forbidden band width. Using a disk of high-purity silicon and a titatnium-sapphire pulsed laser, we study experimentally a 180° phase shifter operated with a Gaussian wave beam at a frequency of 30 GHz. Efficient phase shifting of the wave beam over a time of several nanoseconds is shown at a low power level.
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页码：786 / 793
页数：7
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