Emission distribution in GaInAsSb/GaSb flip-chip diodes

被引：0
|
作者：
A. L. Zakgeim
N. D. Il’inskaya
S. A. Karandashev
B. A. Matveev
M. A. Remennyi
A. E. Cherniakov
A. A. Shlenskii
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,Scientific
[3] State Research Institute for the Rare-Metals Industry (GIREDMET),Technological Center for Microelectronics and Submicrometer Heterostructures, Ioffe Physicotechnical Institute
来源：
Semiconductors | 2009年 / 43卷
关键词：
78.55.Cr; 78.60.Fi; 85.60.Jb;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Results obtained in studies of the near-field pattern of GaInAsSb IR flip-chip light-emitting diodes (LEDs) operating in the 2 μm range are presented. The electrical and reflective properties of ohmic contacts are discussed and the near-field emission distribution is analyzed in relation to the current and electrical and geometrical parameters of the LEDs.
引用
收藏
页码：662 / 667
页数：5
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