Numerical study of electrical behavior of P3HT/PCBM bulk heterojunction solar cell

被引：5
|
作者：
Malti I. [1 ]
Chiali A. [2 ]
Sari N.C. [1 ]
机构：
[1] University of Tlemcen., Chetouane
[2] Preparatory School in Sciences and Techniques Tlemcen., Chetouane
来源：
Malti, I. (ilhemmalti@gmail.com) | 1600年 / Allerton Press Incorporation卷 / 52期
关键词：
Energy gap - Butyric acid - Carrier mobility - Tin oxides - Heterojunctions - Indium compounds - Solar cell efficiency;
D O I：
10.3103/S0003701X16020195
中图分类号：
学科分类号：
摘要：
In this work the program AMPS-1D was used to optimize the performance of the organic solar cells. The cells considered consist of poly(3-HexylThiophène) [P3HT] as electron donors, and (6,6)-phenyl- C61-butyric acid methyl ester [PCBM] as electron acceptor, (P3HT/PCBM) is used as photo-active material, sandwiched between a transparent indium tin oxide (ITO) and layer of poly(3,4 ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT/PSS) on top of the ITO electrode and an AL backside contact. The results showed that the optimum thickness of the solar cell is about 400 nm, Voc = 0.61 at T = 300 K. This is in the good agreement with the corresponding computer simulation value of 0.63 V. The maximum limit for the organic solar cell efficiency is about 8%, provided that the band-gap of the cell is about 1.5 eV. © 2016, Allerton Press, Inc.
引用
收藏
页码：122 / 127
页数：5
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