Fabrication and characterization of transparent conducting titanium-zinc oxide nanostructured thin films

被引:1
|
作者
Lu Z. [1 ]
Long L. [1 ]
Zhong Z.-Y. [1 ,2 ]
Hou J. [1 ,2 ]
Yang C.-Y. [1 ,2 ]
Gu J.-H. [3 ]
Long H. [1 ]
机构
[1] College of Electronic Information Engineering, South-Central University for Nationalities, Wuhan
[2] Hubei Key Laboratory of Intelligent Wireless Communications, South-Central University for Nationalities, Wuhan
[3] Center of Experiment Teaching, South-Central University for Nationalities, Wuhan
基金
中国国家自然科学基金;
关键词
A;
D O I
10.1007/s11801-016-5256-6
中图分类号
学科分类号
摘要
Nano transparent conducting titanium-zinc oxide (Ti-ZnO) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technique. The deposited films are characterized by X-ray diffraction (XRD), four-probe meter and UV-visible spectrophotometer. The effects of Ti-doping content on the structural, optical and electrical properties of the films are investigated. The XRD results show that the obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The structural and optoelectronic characteristics of the deposited films are subjected to the Ti-doping content. The Ti-ZnO sample fabricated with the Ti-doping content of 3% (weight percentage) possesses the best crystallinity and optoelectronic performance, with the highest degree of preferred (002) orientation of 99.87%, the largest crystallite size of 83.2 nm, the minimum lattice strain of 6.263×10-4, the highest average visible transmittance of 88.8%, the lowest resistivity of 1.18×10-3 Ω·cm and the maximum figure of merit (FOM) of 7.08×103 Ω-1·cm-1. Furthermore, the optical bandgaps of the films are evaluated by extrapolation method and observed to be an increasing tendency with the increase of the Ti-doping content. © 2016, Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
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页码:128 / 131
页数:3
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