Anisotropic interface contribution to the spin-orbit interaction in quantum wells

被引：0
|
作者：
P. S. Alekseev
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
来源：
JETP Letters | 2013年 / 98卷
关键词：
GaAs; Electron Spin Resonance; JETP Letter; Orbit Interaction; Plane Component;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Experimental data on the anisotropy of electron spin resonance in a GaAs/AlGaAs quantum well have been interpreted. In has been shown that the spin-orbit interaction in quantum wells includes, in addition to the isotropic Bychkov-Rashba and anisotropic volume Dresselhaus contributions, the anisotropic contribution determined by the structure of interfaces.
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页码：84 / 87
页数：3
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