Specific features of Bi2Te3 doping with Sn

被引：0
|
作者：
M. K. Zhitinskaya
S. A. Nemov
T. E. Svechnikova
机构：
[1] St. Petersburg State Technical University,A. A. Baikov Institute of Metallurgy
[2] Russian Academy of Sciences,undefined
来源：
Physics of the Solid State | 1998年 / 40卷
关键词：
Spectroscopy; State Physics; Bismuth; Valence Band; Bi2Te3;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of doping bismuth telluride with tin, on its electrophysical properties, has been studied. It is shown that the main features in the transport coefficients of Bi2Te3:Sn can be explained by the existence of resonant Sn states within the valence band. The existence of resonant Sn states was confirmed by codoping Bi2Te3:Sn with the electroactive impurity I.
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页码：1297 / 1300
页数：3
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