Modeling of ammonothermal growth of gallium nitride single crystals

被引:0
|
作者
Q.-S. Chen
S. Pendurti
V. Prasad
机构
[1] Institute of Mechanics,Department of Mechanical and Materials Engineering
[2] Chinese Academy of Sciences,undefined
[3] Florida International University,undefined
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关键词
Heat Transfer; Porous Media; Nitride; Gallium; Supersaturation;
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摘要
Ammonothermal growth of GaN crystals with a retrograde solubility has been modeled and simulated here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow in the porous charge is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. For the case of retrograde solubility, the charge is put above the baffle. The temperature difference between the dissolving zone and growth zone is found smaller than that applied on the sidewall of autoclave. The baffle opening has a strong effect on the nutrient transport and supersaturation of GaN species in the growth zone.
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页码:1409 / 1414
页数:5
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