Preparation and Properties of Stoichiometric Vanadium Oxides

被引:0
|
作者
M. A. Abdullaev
I. K. Kamilov
E. I. Terukov
机构
[1] Russian Academy of Sciences,Institute of Physics, Dagestan Scientific Center
[2] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源
Inorganic Materials | 2001年 / 37卷
关键词
Vanadium; Partial Pressure; Oxide Film; V2O3; Oxygen Partial Pressure;
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摘要
Stoichiometric films of the V2O3–V2O5system, including the Magneli phases VnO2n– 1(3 ≤n≤ 9), were prepared by thermal oxidation of metallic vanadium between 720 and 950 K in quartz tubes evacuated to a residual pressure below 10–3Pa. The oxidation was performed in the presence of powder mixtures of two vanadium oxides with adjacent stability fields so as to ensure an oxygen partial pressure corresponding to the stoichiometry of the required vanadium oxide. The oxide films thus prepared showed a sharp metal–insulator transition, with a conductivity change comparable to that in single crystals.
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页码:271 / 273
页数:2
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