Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

被引：0
|
作者：
I. S. Romanov
I. A. Prudaev
V. V. Kopyev
机构：
[1] National Research Tomsk State University,
来源：
Russian Physics Journal | 2018年 / 61卷
关键词：
gallium and indium nitrides; quantum well; internal quantum efficiency; photoluminescence; tunneling; Auger recombination;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are presented. It is shown that a decrease in the thickness of the GaN barrier layers from 15 to 3 nm leads to an increase in the maximum value of IQE and to a shift of the maximum to the region of high excitation powers. The result obtained is explained with consideration for the decrease in the Auger recombination rate due to a more uniform distribution of charge carriers over the active region in structures with a barrier thickness of 3 nm.
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页码：211 / 215
页数：4
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