Effect of annealing temperature on the ferroelectric properties of BiFeO3 thin films prepared by sol-gel process

被引：0
|
作者：
Xiuzhang Wang
Bowu Yan
Zhigao Dai
Meifeng Liu
Shengxiang Xu
Wenqing Li
Hongri Liu
机构：
[1] Hubei Key Laboratory of Pollutant Analysis & Reuse Technology,School of Computer Science and Technology
[2] Huangshi Institue of Technology,College of Physics and Electronic Science
[3] Hubei National University,undefined
来源：
Journal of Wuhan University of Technology-Mater. Sci. Ed. | 2010年 / 25卷
关键词：
multiferroics; BiFeO; thin film; sol-gel method; ferroelectricity; dielectric property;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Sol-gel process was adopted to prepare BiFeO3 films. BiFeO3 films were deposited on LaNiO3 coated Si(100) substrates annealed at 500 and 550 °C, respectively. The X-ray diffraction results reveal that BiFeO3 film has a rhombohedrally distorted perovskite structure with space group R3c. The film annealed at 500 °C has larger remnant polarization (Pr) of 35.3 µC/cm2. For the film annealed at 550 °C, smaller remnant polarization of Pr=4.8 µC/cm2 is observed for its low breakdown electric field. Lower leakage conduction is observed in the film annealed at 500 °C at low applied field.
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页码：384 / 387
页数：3
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