The detection limit of curved InGaAs/AlGaAs/GaAs hall bars

被引：2
|
作者：
Chesnitskiy A.V. [1 ]
Mikhantiev E.A. [1 ]
机构：
[1] Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, pr. Ak. Lavrent’eva 13, Novosibirsk
来源：
Russian Microelectronics | 2016年 / 45卷 / 2期
关键词：
Magnetic Field; GaAs; Bias Current; RUSSIAN Microelectronics; Weak Magnetic Field;
D O I：
10.1134/S1063739716020025
中图分类号：
学科分类号：
摘要：
The work is devoted to the study of noise characteristics of curved Hall bars based on InGaAs/AlGaAs/GaAs semiconductor heterostructures. The noise spectral density SN(f) was investigated experimentally and the magnetic field detection limit BN of a flat and similar Hall bar rolled in a tube was defined. The low-frequency spectra of 1/f noise were studied and the dimensionless Hooge noise parameter αH was determined. The ability to use the curved Hall bars in the devices for measuring weak magnetic fields (<1 μT) was predicted. © 2016, Pleiades Publishing, Ltd.
引用
收藏
页码：105 / 111
页数：6
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