Development of an infrared detector: Quantum well infrared photodetector

被引:0
|
作者
Wei Lu
Ling Li
HongLou Zheng
WenLan Xu
DaYuan Xiong
机构
[1] Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics
[2] East China Normal University,Ministry of Education Laboratory for Polarization Material and Device, College of Information Sciences and Technology
关键词
infrared photoelectronics; QWIP; progress; development trend;
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中图分类号
学科分类号
摘要
The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.
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页码:969 / 977
页数:8
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