Exact analytical solution to the Poisson-Boltzmann equation for semiconductor devices

This paper shows that the nonlinear Poisson-Boltzmann equation for semiconductor devices describing potential distribution in a Double Gate-Metal Oxide Semiconductor Field Effect Transistor (DG-MOSFET) is exactly solvable. The DG-MOSFET represents one of the most advanced device structures in semiconductor technology and is a primary focus of modeling efforts in the semiconductor industry. Furthermore, exact analytical solution is obtained in the implicit form for further physical interpretation and a full discussion is given. © 2014 Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg.