Spin-lattice relaxation of 113Cd and 19F nuclear spins in the crystal lattice of CdF2 semiconductor crystals with DX centers

被引：0
|
作者：
S. A. Kazanskii
W. W. Warren
A. I. Ryskin
机构：
[1] St. Petersburg State University of Information Technology,
[2] Mechanics,undefined
[3] and Optics,undefined
[4] Oregon State University,undefined
来源：
Semiconductors | 2009年 / 43卷
关键词：
61.18.Fs; 61.72.Hh; 72.20.Jc; 72.25.Rb; 76.60.Es;
D O I：
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摘要：
Temperature dependences of spin-lattice relaxation rates of the 113Cd and 19F lattice nuclei in the CdF2 semiconductor crystals containing bistable In and Ga impurity centers show that the relaxation mechanisms in the CdF2:In and CdF2:Ga crystals are different. The basic mechanism of spin-lattice relaxation of the 113Cd nuclei in the CdF2:In crystal is the scalar contact’s interaction of nuclear spins with spins of mobile charge carriers of the conduction band. In the CdF2:Ga crystal, relaxation of the 113Cd nuclei is controlled by the contact interaction with electrons moving within a narrow band of impurity states. The same mechanism is apparently responsible for relaxation of the 19F nuclei in this crystal. In the CdF2:In crystal, the 19F nuclei relax by the dipole-dipole interaction with electron spins localized at the hydrogen-like orbits of shallow donors.
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页码：985 / 992
页数：7
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