Monte Carlo simulation of growth of nanowhiskers

被引：0
|
作者：
A. G. Nastovjak
I. G. Neizvestny
I. L. Shwartz
Z. Sh. Yanovitskaya
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
来源：
Semiconductors | 2010年 / 44卷
关键词：
Molecular Beam Epitaxy; Droplet Diameter; Catalyst Material; Efficient Wetting; Nonadditive Interaction;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The growth of silicon nanowhiskers on the Si (111) surface activated with Au is studied by Monte Carlo simulation. The dependences of the rate of growth of whiskers on the temperature, deposition rate, and catalyst droplet diameter are obtained, and the morphological properties of the growing wirelike nanocrystal are studied. In addition to the growth of nanowhiskers, a number of experimentally observed effects, such as migration of the droplet from the whisker top, faceting of the whisker sidewalls, and branching are established for the model system. It is shown that, under certain conditions of wetting of the whisker material with the catalyst, formation of hollow nanowhiskers is possible.
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页码：127 / 132
页数：5
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