Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition

被引：0
|
作者：
A. V. Novak
V. R. Novak
A. A. Dedkova
E. E. Gusev
机构：
[1] National Research University (MIET),
[2] JSC Angstrem,undefined
[3] Lukin Research Institute of Physical Problems,undefined
来源：
Semiconductors | 2018年 / 52卷
关键词：
films of PECVD silicon nitride SiN; mechanical stresses; IR Fourier spectroscopy; optical profilometry;
D O I：
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学科分类号：
摘要：
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页码：1953 / 1957
页数：4
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