Magnetic Order in GaMnAs Layers

被引:0
|
作者
O. Fedorych
Z. Wilamowski
M. Potemski
M. Byszewski
J. Sadowski
机构
[1] Institute of Physics PAS,Oersted Laboratory
[2] Grenoble High Magnetic Field Laboratory,Department of Experimental Physics
[3] MPI/CNRS,undefined
[4] BP 166,undefined
[5] Copenhagen University,undefined
[6] Universitetparken,undefined
[7] 5,undefined
[8] Chalmers University of Technology and Göteborg University,undefined
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关键词
spintronic; diluted magnetic semiconductor; ferromagnetism;
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学科分类号
摘要
MBE grown Ga1−xMnxAs layers were investigated by means of magnetic resonance techniques. Two phases can be distinguished: an almost isotropic ferromagnetic phase in insulating layers and an anisotropic ferromagnetic phase in the metallic Ga1−xMnxAs. Under a strong magnetic field the field-induced insulator-to-metal transition is accompanied by the change from the ferromagnetic to the ferrimagnetic phase.
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页码:51 / 53
页数:2
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