Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD

被引：0
|
作者：
Paul R. Chalker
Paul A. Marshall
Richard J. Potter
Timothy B. Joyce
Anthony C. Jones
Stephen Taylor
Timothy C. Q. Noakes
P. Bailey
机构：
[1] University of Liverpool,Department of Materials Science and Engineering
[2] University of Liverpool,Department of Chemistry and Surface Science Research Center
[3] Epichem Oxides and Nitrides,Department of Electrical Engineering and Electronics
[4] University of Liverpool,undefined
[5] CCLRC Daresbury Laboratory,undefined
来源：
Journal of Materials Science: Materials in Electronics | 2004年 / 15卷
关键词：
SiO2; Hafnium; HfO2; Internal Oxidation; Dielectric Film;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The hafnium and silicon precursors, Hf(NMe2)4 and ButMe2SiOH, have been investigated for the MOCVD of high-κ hafnium silicate, (HfO2)1–x–(SiO2)x films for gate dielectric applications. Control of the silica concentration in the hafnium silicate can be achieved by varying the relative precursor ratios up to a saturation level of 35–40% SiO2. The thermal stability of the resulting hafnium silicate films in air has been investigated using medium energy ion scattering. Internal oxidation of the underlying silicon substrate is discernable when the films are annealed in dry air for 15 min over the temperature range 800–1000 °C.
引用
收藏
页码：711 / 714
页数：3
相关论文
共 50 条
  • [1] Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD
    Chalker, PR
    Marshall, PA
    Potter, RJ
    Joyce, TB
    Jones, AC
    Taylor, S
    Noakes, TCQ
    Bailey, P
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (11) : 711 - 714
  • [2] Deposition of hafnium silicate films by liquid injection MOCVD using a single source or dual source approach
    Roberts, JL
    Marshall, PA
    Jones, AC
    Chalker, PR
    Bickley, JF
    Williams, PA
    Taylor, S
    Smith, LM
    Critchlow, GW
    Schumacher, M
    Lindner, J
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 2004, 14 (03) : 391 - 395
  • [3] Thermal response of MOCVD hafnium silicate
    Lysaght, P
    Foran, B
    Stemmer, S
    Bersuker, G
    Bennett, J
    Tichy, R
    Larson, L
    Huff, HR
    [J]. MICROELECTRONIC ENGINEERING, 2003, 69 (2-4) : 182 - 189
  • [4] Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors
    Taechakumput, P.
    Zhao, C. Z.
    Taylor, S.
    Werner, M.
    Chalker, P. R.
    Gaskell, J. M.
    Aspinall, H. C.
    Jones, A. C.
    Chen, Susu
    [J]. JOURNAL OF NANOMATERIALS, 2012, 2012
  • [5] Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD
    Dobrocka, Edmund
    Gucmann, Filip
    Husekova, Kristina
    Nadazdy, Peter
    Hrubisak, Fedor
    Egyenes, Fridrich
    Rosova, Alica
    Mikolasek, Miroslav
    Tapajna, Milan
    [J]. MATERIALS, 2023, 16 (01)
  • [6] Ultra-thin zirconium and hafnium silicate films deposited by MOCVD on Si(100)
    Landheer, D
    Wu, X
    Chen, HW
    Lee, MS
    Moisa, S
    Huang, TY
    Chao, TS
    Lu, ZH
    Lennard, WN
    [J]. PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS I, 2003, 2002 (28): : 125 - 134
  • [7] MOCVD of hafnium silicate films obtained from a single-source precusor on silicon and germanium for gate-dielectric applications
    Lemberger, Martin
    Schoen, Florian
    Dirnecker, Tobias
    Jank, Michael Peter Max
    Frey, Lothar
    Ryssel, Heiner
    Paskaleva, Albena
    Zuercher, Stefan
    Bauer, Anton Johann
    [J]. CHEMICAL VAPOR DEPOSITION, 2007, 13 (2-3) : 105 - 111
  • [8] Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
    Lemberger, M
    Paskaleva, A
    Zürcher, S
    Bauer, AJ
    Frey, L
    Ryssel, H
    [J]. MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) : 819 - 822
  • [9] Tuning the dielectric properties of hafnium silicate films
    Fachmann, Christian
    Frey, Lothar
    Kudelka, Stephan
    Boescke, Tim
    Nawka, Stefan
    Erben, Elke
    Doll, Theodor
    [J]. MICROELECTRONIC ENGINEERING, 2007, 84 (12) : 2883 - 2887
  • [10] Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors
    Marshall, PA
    Potter, RJ
    Jones, AC
    Chalker, PR
    Taylor, S
    Critchlow, GW
    Rushworth, SA
    [J]. CHEMICAL VAPOR DEPOSITION, 2004, 10 (05) : 275 - 279
12345