Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals

被引：0

作者：

N. I. Tarbaev

机构：

[1] Academy of Sciences of Ukraine,Institute of Semiconductor Physics

来源：

Physics of the Solid State | 1998年 / 40卷

关键词：

Spectroscopy; Cadmium; State Physics; Plastic Deformation; Emission Spectrum;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The transformation of the low-temperature emission spectrum of cadmium selenide crystals during plastic deformation by a point load and by uniaxial compression is investigated. A one-to-one correspondence is established between the occurrence of photoluminescence bands in the vicinity of 1.765 eV and the motion of dislocations in the prismatic slip system, on the one hand, and the emergence of a 1.792-eV band as a result of dislocation slip in the basal plane, on the other.

引用

页码：1672 / 1675

页数：3

共 50 条

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[3] Erratum: Low-temperature photoluminescence determination of dislocation slip systems in CdSe single crystals [Phys. solid state 40, No. 10, 1672–1675 (October 1998)]
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