Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser

被引：0
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作者：
S. O. Slipchenko
A. A. Podoskin
N. A. Pikhtin
Z. N. Sokolova
A. Y. Leshko
I. S. Tarasov
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
来源：
Semiconductors | 2011年 / 45卷
关键词：
Threshold Condition; Optical Loss; Laser Crystal; Passive Region; Material Gain;
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摘要：
Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied at a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.
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