Meshfree analysis of high-frequency field-effect transistors: distributed modeling approach

被引：0
|
作者：
Babak Honarbakhsh
机构：
[1] Shahid Beheshti University,Department of Electrical Engineering
来源：
Journal of Computational Electronics | 2019年 / 18卷
关键词：
Collocation; Crank–Nicolson; HBF; FET; Meshfree; Nonlinear; RBF;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Time-domain analysis of high-frequency field-effect transistors is presented using the meshfree radial point interpolation method. The distributed modeling approach is followed in the linear and nonlinear regimes. The corresponding matrix Telegrapher’s equation and terminal conditions are discretized using the weighted average method. Conditionally and unconditionally stable schemes are studied. For linear and conditionally stable nonlinear analysis, the leap-frog and Crank–Nicolson methods are used. To provide unconditional stability in the nonlinear regime, a hybrid backward/forward scheme is exploited.
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页码：164 / 177
页数：13
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