Synthesis of vanadium dioxide films by a modified sol-gel process

被引：0
|
作者：
D. A. Vinichenko
V. P. Zlomanov
V. A. Vasil’ev
D. S. Seregin
O. Ya. Berezina
机构：
[1] Moscow State University,Faculty of Chemistry
[2] Moscow State Institute of Radio Engineering,undefined
[3] Electronics,undefined
[4] and Automation (Technical University),undefined
[5] Petrozavodsk State University,undefined
来源：
Inorganic Materials | 2011年 / 47卷
关键词：
Vanadium; Vanadium Oxide; Vanadium Pentoxide; Vanadium Dioxide; Initial Solution Concentration;
D O I：
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中图分类号：
学科分类号：
摘要：
Vanadium dioxide films have been grown on silicon substrates and on SiO2 layers on silicon by a modified sol-gel process using methyl cellosolve as a solvent. We have failed to obtain vanadium dioxide layers on Pt/TiOx/SiO2/Si substrates. For all of the substrates studied, we have examined the effect of synthesis conditions (initial solution concentration, deposition procedure, and oxidation and reduction anneals) on the phase composition, thickness, and surface morphology of the films.
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页码：279 / 284
页数：5
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