Photoelectric properties of structures based on TlInS2 single crystals

被引：0
|
作者：
S. Iida
N. Mamedov
V. Yu. Rud’
Yu. V. Rud’
机构：
[1] Nagaoka University of Technology,A. F. Ioffe Physicotechnical Institute
[2] St. Petersburg State Technical University,undefined
[3] Russian Academy of Sciences,undefined
来源：
Semiconductors | 1998年 / 32卷
关键词：
Radiation; Magnetic Material; Electromagnetism; Quantum Efficiency; Optical Radiation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The photovoltaic effect in heterocontacts of various types, viz., In/TlInS2, InSe/TlInS2, and GaSe/TlInS2, is investigated. The relative photoconversion quantum efficiency of these structures is studied as a function of the energy of the incident photons and the polarization plane of linearly polarized light. It follows from photosensitivity measurements that the photosensitive structures obtained can be employed as broad-band and selective photosensors of optical radiation.
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页码：67 / 70
页数：3
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