Physics and technology of quantum dot semiconductor nanostructures for IR application

被引：0

作者：

Dvurechenskii A.V. ^{[1
]}

Yakimov A.I. ^{[1
]}

机构：

[1] Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090

来源：

Bulletin of the Russian Academy of Sciences: Physics | 2009年 / 73卷 / 1期

基金：

俄罗斯基础研究基金会;

关键词：

Electron Spin Resonance Line; Dark Current Density; Electron Spin Resonance Line Width; Hole Binding Energy;

D O I：

10.3103/S1062873809010183

中图分类号：

学科分类号：

摘要：

Problems and approaches to their solution are analyzed for quantum dot semiconductor nanostructures for IR photodetectors. Uniformity of a quantum dot array, electronic states in a dense dot array, and design of IR photodetector structures are considered. A dense quantum dot array allows superposition of elastic strain fields, thus changing the electronic properties of nanosystems. © Allerton Press, Inc. 2009.

引用

页码：66 / 69

页数：3

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