Single crystal aluminum deposit formation on isotropic substrates by means of self-organized ion sputtering

被引：0
|
作者：
V. I. Perekrestov
A. S. Kornyushchenko
Yu. A. Kosminskaya
机构：
[1] Sumy State University,
来源：
Technical Physics Letters | 2006年 / 32卷
关键词：
81.10.-h;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A substantially new technological approach is considered, which is based on the self-organized formation of aluminum single crystal layer on isotropic substrates in the course of stationary condensation of reverse diffusion fluxes in a planar de magnetron. The functional possibilities of self-organized ion sputtering systems are discussed.
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页码：868 / 870
页数：2
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