Spin-Polarized Tunneling in Fully Epitaxial Semiconductor-Based Magnetic Tunnel Junctions

被引：0
|
作者：
M. Tanaka
Y. Higo
S. Sugahara
机构：
[1] The University of Tokyo,Department of Electronic Engineering
[2] 7-3-1 Hongo,undefined
[3] Bunkyo-ku,undefined
[4] Japan Science & Technology Corporation,undefined
[5] 4-1-8 Honcho,undefined
来源：
Journal of Superconductivity | 2003年 / 16卷
关键词：
magnetic heterostructure; magnetic tunnel junction; tunneling magnetoresistance; GaMnAs; MnAs;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Tunneling magneto-resistance (TMR) in magnetic heterostructures is a very important phenomenon for future spin-electronic devices. This paper presents our TMR studies on two epitaxial magnetic tunnel junctions (MTJs): GaMnAs/AlAs/GaMnAs ferromagnetic/ nonmagnetic semiconductor MTJs, and MnAs/AlAs/MnAs ferromagnetic-metal/ semiconductor MTJs, which are both compatible with semiconductor device technology.
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页码：241 / 248
页数：7
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