Resonant Activation of Resistive Switching in ZrO2(Y) Based Memristors

被引：0
|
作者：
V. N. Baranova
D. O. Filatov
D. A. Antonov
I. N. Antonov
O. N. Gorshkov
机构：
[1] Lobachevskii State University of Nizhnii Novgorod,
来源：
Semiconductors | 2020年 / 54卷
关键词：
resistive switching; memristor; stability; resonant activation; yttria stabilized zirconia;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：1830 / 1832
页数：2
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