Material Study of Co2CrAl Heusler Alloy Magnetic Thin Film and Co2CrAl/n-Si Schottky Junction Device

The structural, optical, magnetic, and electrical properties of Co2CrAl Heusler alloy magnetic thin films grown on n-type silicon (100) substrate (n-Si) and glass substrate were studied. The films were deposited using DC magnetron sputtering. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films. The effect of grain size on transmittance was investigated. Magnetic measurements revealed the presence of magnetic ordering in the films. Partial densities of states (PDOS) of the Co2CrAl were calculated by density functional theory (DFT) methods using the Vienna Ab initio Simulation Package (VASP). Co2CrAl thin film deposited over a silicon substrate was investigated for I–V characteristics. The electrical behaviour confirmed the existence of a Co2CrAl/n-Si Schottky contact, which suggests a spin injection phenomenon from Co2CrAl to n-Si by tunnelling through the lowered Schottky barrier.