Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

被引：0
|
作者：
Caihong Jia
Yonghai Chen
Yan Guo
Xianglin Liu
Shaoyan Yang
Weifeng Zhang
Zhanguo Wang
机构：
[1] Institute of Semiconductors,Key Laboratory of Semiconductor Material Science
[2] Chinese Academy of Science,Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics Electronics
[3] Henan University,undefined
来源：
Nanoscale Research Letters | / 6卷
关键词：
Valence Band Maximum; Fermi Energy Level; Valence Band Offset; Conduction Band Offset; Ti2p Peak;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
引用
收藏
相关论文
共 50 条
  • [1] Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
    Jia, Caihong
    Chen, Yonghai
    Guo, Yan
    Liu, Xianglin
    Yang, Shaoyan
    Zhang, Weifeng
    Wang, Zhanguo
    NANOSCALE RESEARCH LETTERS, 2011, 6
  • [2] Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
    C. H. Jia
    Y. H. Chen
    X. L. Zhou
    A. L. Yang
    G. L. Zheng
    X. L. Liu
    S. Y. Yang
    Z. G. Wang
    Applied Physics A, 2010, 99 : 511 - 514
  • [3] Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy
    Jia, C. H.
    Chen, Y. H.
    Zhou, X. L.
    Yang, A. L.
    Zheng, G. L.
    Liu, X. L.
    Yang, S. Y.
    Wang, Z. G.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 99 (02): : 511 - 514
  • [4] Valence band offset of MgO/InN heterojunction measured by x-ray photoelectron spectroscopy
    Zhang, P. F.
    Liu, X. L.
    Zhang, R. Q.
    Fan, H. B.
    Song, H. P.
    Wei, H. Y.
    Jiao, C. M.
    Yang, S. Y.
    Zhu, Q. S.
    Wang, Z. G.
    APPLIED PHYSICS LETTERS, 2008, 92 (04) : 1523
  • [5] Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
    Li, Zhiwei
    Zhang, Biao
    Wang, Jun
    Liu, Jianming
    Liu, Xianglin
    Yang, Shaoyan
    Zhu, Qinsheng
    Wang, Zhanguo
    NANOSCALE RESEARCH LETTERS, 2011, 6
  • [6] Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy
    Zhiwei Li
    Biao Zhang
    Jun Wang
    Jianming Liu
    Xianglin Liu
    Shaoyan Yang
    Qinsheng Zhu
    Zhanguo Wang
    Nanoscale Research Letters, 6
  • [7] Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
    Zhang, B. L.
    Sun, G. S.
    Guo, Y.
    Zhang, P. F.
    Zhang, R. Q.
    Fan, H. B.
    Liu, X. L.
    Yang, S. Y.
    Zhu, Q. S.
    Wang, Z. G.
    APPLIED PHYSICS LETTERS, 2008, 93 (24) : 2779
  • [8] Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
    King, P. D. C.
    Veal, T. D.
    Jefferson, P. H.
    McConville, C. F.
    Wang, T.
    Parbrook, P. J.
    Lu, Hai
    Schaff, W. J.
    APPLIED PHYSICS LETTERS, 2007, 90 (13)
  • [9] Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy
    Zhang, Riqing
    Zhang, Panfeng
    Kang, Tingting
    Fan, Haibo
    Liu, Xianglin
    Yang, Shaoyan
    Wei, Hongyuan
    Zhu, Qinsheng
    Wang, Zhanguo
    APPLIED PHYSICS LETTERS, 2007, 91 (16)
  • [10] Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy
    Zhang, P. F.
    Liu, X. L.
    Zhang, R. Q.
    Fan, H. B.
    Yang, A. L.
    Wei, H. Y.
    Jin, P.
    Yang, S. Y.
    Zhu, Q. S.
    Wang, Z. G.
    APPLIED PHYSICS LETTERS, 2008, 92 (01)
12345