Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer

被引：0

作者：

I. E. Tyschenko

M. Voelskow

A. G. Cherkov

V. P. Popov

机构：

[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch

[2] Research Center Dresden-Rossendorf,Institute of Ion Beam Physics and Materials Research

来源：

Semiconductors | 2009年 / 43卷

关键词：

61.72.Ww; 68.55.-a; 73.40.Ty; 73.50.Dn; 81.20.Vj; 81.40.Ef;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Systematic features of endotaxial growth of intermediate germanium layers at the bonding interface in the silicon-on-insulator structure consisting of buried SiO2 layer implanted with Ge+ ions are studied in relation to the annealing temperature. On the basis of the results for high-resolution electron microscopy and thermodynamic analysis of the Si/Ge/SiO2 system it is assumed that the endotaxial growth of the Ge layer occurs via formation of a melt due to enhanced segregation and accumulation of Ge at the Si/SiO2 interface. Effect of germanium at the bonding interface on the Hall mobility of holes in silicon layers with nanometer-scale thickness is studied. It is found that the structures including the top silicon layer with the thickness 3–20 nm and incorporating germanium feature the hole mobility that exceeds by a factor of 2–3 the hole mobility in corresponding Ge-free silicon-on-insulator structures.

引用

页码：52 / 56

页数：4

共 22 条

[1] Growth and electrical properties of the (Si/Ge)-on-insulator structures formed by ion implantation and subsequent hydrogen-assisted transfer
Tyschenko, I. E.
Voelskow, M.
Cherkov, A. G.
Popov, V. P.
SEMICONDUCTORS, 2009, 43 (01) : 52 - 56
[2] The properties of the nanometer thick Si/Ge films-on-insulator produced by Ge+ ion implantation and subsequent hydrogen transfer
Tyschenko, I. E.
Voelskow, M.
Cherkov, A. G.
Popov, V. P.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 12 2008, 2008, 5 (12): : 3724 - +
[3] SiGe heterostructures-on-insulator produced by Ge+-ion implantation and subsequent hydrogen transfer
Tyschenko, I. E.
Cherkov, A. G.
Voelskow, M.
Popov, V. P.
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, 2008, 131-133 : 143 - +
[4] Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator
Sawano, K.
Hoshi, Y.
Kubo, S.
Arimoto, K.
Yamanaka, J.
Nakagawa, K.
Hamaya, K.
Miyao, M.
Shiraki, Y.
THIN SOLID FILMS, 2016, 613 : 24 - 28
[5] Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth
Wen, J. J.
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Zhou, T. W.
Xue, C. L.
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Wang, Q. M.
Cheng, B. W.
THIN SOLID FILMS, 2015, 586 : 54 - 57
[6] Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers
Tyschenko, I. E.
Voelskow, M.
Cherkov, A. G.
Popov, V. P.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (8-9): : 1277 - 1280
[7] INFLUENCE OF ION-IMPLANTATION ON ELECTRICAL PROPERTIES OF AMORPHOUS-GE AND SI
BEYER, W
STUKE, J
WAGNER, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 231 - 240
[8] Formation of Local Insulating Regions in Si/Si-Ge Structures by Ion Implantation with Subsequent Stain Etching
Starkov V.V.
Starostina E.A.
Vyatkin A.F.
Gorbatov Yu.B.
Russian Microelectronics, 2000, 29 (5) : 294 - 298
[9] Electrical properties of Si:H/P-Si structures fabricated by hydrogen implantation
Naumova, OV
Antonova, IV
Popov, VP
Stas', VF
SEMICONDUCTORS, 2003, 37 (01) : 92 - 96
[10] Electrical properties of Si:H/p-Si structures fabricated by hydrogen implantation
O. V. Naumova
I. V. Antonova
V. P. Popov
V. F. Stas’
Semiconductors, 2003, 37 : 92 - 96

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