Thermoelectric properties of p-type PbSe nanowires

被引:0
|
作者
Wenjie Liang
Oded Rabin
Allon I. Hochbaum
Melissa Fardy
Minjuan Zhang
Peidong Yang
机构
[1] University of California,Department of Chemistry
[2] Toyota Motor Engineering & Manufacturing North America (TEMA) Inc.,Materials Research Department, Toyota Technical Center
[3] Chinese Academy of Sciences,Institute of Physics
[4] University of Maryland,Department of Materials Science and Engineering and the Institute for Research in Electronics and Applied Physics
来源
Nano Research | 2009年 / 2卷
关键词
Nanowire; thermoelectrics; thermopower; thermal conductivity; lead chalcogenide;
D O I
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中图分类号
学科分类号
摘要
The thermoelectric properties of individual solution-phase synthesized p-type PbSe nanowires have been examined. The nanowires showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the PbSe nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at room temperature.
引用
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页码:394 / 399
页数:5
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