Design and fabrication of differently shaped pyramids on Si{100} by anisotropic wet etching

被引:0
|
作者
Kodai Imaeda
Katsuhiko Bessho
Mitsuhiro Shikida
机构
[1] Nagoya University,Department of Micro
[2] Nagoya University,Nano Systems Engineering
[3] Hiroshima City University,Department of Mechanical Science and Engineering
来源
Microsystem Technologies | 2016年 / 22卷
关键词
Pyramid; Mask Pattern; Pyramid Structure; Shaped Pyramid; Scar Area;
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中图分类号
学科分类号
摘要
We aimed to produce differently shaped pyramids, that is, eight-sided, triangular, and rhombic pyramids, on the same Si{100} wafer by simply changing mask patterns. A triangular pyramid has an advantage in that it can always become sharp because its vertex becomes a point and is not affected by fabrication errors. A rhombic pyramid that looks like an arrow head was designed to decrease the insertion friction and scar area even if it is inserted deeply into the skin. Triangular and H-shaped etching mask patterns were designed to produce triangular and rhombic pyramid structures on Si{100} on the basis of eight-sided pyramid formation. Both triangular and rhombic pyramids were successfully fabricated as new MEMS structures by applying TMAH anisotropic wet etching (25.0 wt%, 70 °C). A sharp tip with a radius of less than a few hundred nm was obtained in both the triangular and rhombic Si pyramids.
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页码:2801 / 2809
页数:8
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