Efficient carrier multiplication in CsPbI3 perovskite nanocrystals

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作者
Chris de Weerd
Leyre Gomez
Antonio Capretti
Delphine M. Lebrun
Eiichi Matsubara
Junhao Lin
Masaaki Ashida
Frank C. M. Spoor
Laurens D. A. Siebbeles
Arjan J. Houtepen
Kazutomo Suenaga
Yasufumi Fujiwara
Tom Gregorkiewicz
机构
[1] University of Amsterdam,Institute of Physics
[2] Osaka University,Division of Materials and Manufacturing Science, Graduate School of Engineering
[3] 2-1 Yamadaoka,Department of Physics
[4] Osaka Dental University,Graduate School of Engineering Science
[5] 8-1 Kuzuha-Hanazono,Department of Physics
[6] Osaka University,Faculty of Applied Sciences
[7] 1-3 Machikaneyama,National Institute of Advanced Industrial Science and Technology (AIST)
[8] Southern University of Science and Technology,undefined
[9] Delft University of Technology building 58,undefined
[10] van der Maasweg 9,undefined
[11] AIST Central 5,undefined
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摘要
The all-inorganic perovskite nanocrystals are currently in the research spotlight owing to their physical stability and superior optical properties—these features make them interesting for optoelectronic and photovoltaic applications. Here, we report on the observation of highly efficient carrier multiplication in colloidal CsPbI3 nanocrystals prepared by a hot-injection method. The carrier multiplication process counteracts thermalization of hot carriers and as such provides the potential to increase the conversion efficiency of solar cells. We demonstrate that carrier multiplication commences at the threshold excitation energy near the energy conservation limit of twice the band gap, and has step-like characteristics with an extremely high quantum yield of up to 98%. Using ultrahigh temporal resolution, we show that carrier multiplication induces a longer build-up of the free carrier concentration, thus providing important insights into the physical mechanism responsible for this phenomenon. The evidence is obtained using three independent experimental approaches, and is conclusive.
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