TEM Characterization of HgCdTe/CdTe Grown on GaAs(211)B Substrates

被引：0
|
作者：
Jae Jin Kim
R. N. Jacobs
L. A. Almeida
M. Jaime-Vasquez
C. Nozaki
David J. Smith
机构：
[1] Arizona State University,School of Engineering for Matter, Transport and Energy
[2] U.S. Army RDECOM CERDEC Night Vision and Electronic Sensors Directorate,Department of Physics
[3] Arizona State University,undefined
来源：
Journal of Electronic Materials | 2013年 / 42卷
关键词：
HgCdTe; CdTe/GaAs(211)B; MBE; TEM; EDXS;
D O I：
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中图分类号：
学科分类号：
摘要：
A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated.
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页码：3142 / 3147
页数：5
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