Vortex Flows in Semiconductor Device Quantum Channels: Time-Dependent Simulation

被引：0
|
作者：
John R. Barker
Antonio Martinez
机构：
[1] University of Glasgow,Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering
来源：
Journal of Computational Electronics | 2004年 / 3卷
关键词：
quantum transport; semiconductor devices; quantum vortices; de-coherence;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Recent simulation studies have suggested that vortex formation may contribute to the effective channel mobility leading to fluctuations in performance between similar atomistic devices. Here we investigate the origins of vortex flows in semiconductors, the connection with localized angular momentum states and the sensitivity of vortex flows to de-coherence processes. Analytical models and Green function simulation are used for the investigation. The condition for vortex stability is proposed as ωτ > 1 or d < √ Nℏτ/m∗, where 2d is the diameter of the vortex flow, τ is the de-coherence time and ω is the angular frequency of the flow.
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页码：401 / 405
页数：4
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