Nanoscale anisotropic plastic deformation in single crystal GaN

被引:0
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作者
Jun Huang
Ke Xu
Ying Min Fan
Mu Tong Niu
Xiong Hui Zeng
Jian Feng Wang
Hui Yang
机构
[1] Chinese Academy of Sciences,Suzhou Institute of Nano
关键词
GaN; anisotropic; hydride vapor phase epitaxy; nanoindentation; cathodoluminescence; transmission electron microscopy.;
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摘要
Elasto-plastic mechanical deformation behaviors of c-plane (0001) and nonpolar GaN single crystals are studied using nanoindentation, cathodoluminescence, and transmission electron microscopy. Nanoindentation tests show that c-plane GaN is less susceptible to plastic deformation and has higher hardness and Young's modulus than the nonpolar GaN. Cathodoluminescence and transmission electron microscopy characterizations of indent-induced plastic deformation reveal that there are two primary slip systems for the c-plane GaN, while there is only one most favorable slip system for the nonplane GaN. We suggest that the anisotropic elasto-plastic mechanical properties of GaN are relative to its anisotropic plastic deformation behavior.
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