Electron-phonon interaction and Raman scattering in doped GaAs/AlAs superlattices

被引：1
|
作者：
Volodin V.A. [1 ,2 ]
机构：
[1] Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Lavrent’ev 13, Novosibirsk
[2] Novosibirsk State University, ul. Pirogova 2, Novosibirsk
来源：
Optoelectronics, Instrumentation and Data Processing | 2014年 / 50卷 / 3期
关键词：
localization; phonons; plasmons; Raman scattering;
D O I：
10.3103/S8756699014030091
中图分类号：
学科分类号：
摘要：
The Raman scattering spectroscopy method is used to study the interaction of phonons and free charge carriers in doped semiconductor nanostructures (superlattices). In doped superlattices based on polar semiconductors, the collective vibrational modes of free charge carriers (plasmons) shield the long-range Coulomb interaction of cations and anions, which leads to the formation of mixed phononplasmon modes. The angular dispersion (anisotropy) of phonon-plasmon modes in doped GaAs/AlAs superlattices is studied. The observed anisotropy is due to the anisotropy of dielectric permeability in superlattices. © 2014, Allerton Press, Inc.
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收藏
页码：271 / 275
页数：4
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