Silicon and germanium nanowires: Growth, properties, and integration

被引:32
|
作者
Picraux S.T. [1 ,4 ]
Dayeh S.A. [2 ]
Manandhar P. [2 ]
Perea D.E. [2 ]
Choi S.G. [3 ]
机构
[1] Center for Integrated Nanotechnologies (CINT), Los Alamos, NM
[2] National Renewable Energy Laboratory, Golden, CO
关键词
Silicon; Molecular Level; Germanium; Electronic Device; Solar Energy;
D O I
10.1007/s11837-010-0057-z
中图分类号
学科分类号
摘要
Semiconducting nanowires are an area of widespread interest in nano-materials research because of the ability to fabricate one-dimensional structures with tailored functionalities not available in bulk materials. Silicon and germanium nanowires have received particular attention because of the important role played by these materials systems in contemporary microelectronics and their potential for applications ranging from novel electronic devices to molecular level sensing and to solar energy harvesting. This paper provides an overview of the widely used vapor-liquid-solid technique for nanowire growth and its application to our recent silicon and germanium nanowire studies.
引用
收藏
页码:35 / 43
页数:8
相关论文
共 50 条
  • [1] Alternative catalysts for VSS growth of silicon and germanium nanowires
    Lensch-Falk, Jessica L.
    Hemesath, Eric R.
    Perea, Daniel E.
    Lauhon, Lincoln J.
    [J]. JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (07) : 849 - 857
  • [2] Stranski-Krastanow growth of germanium on silicon nanowires
    Pan, L
    Lew, KK
    Redwing, JM
    Dickey, EC
    [J]. NANO LETTERS, 2005, 5 (06) : 1081 - 1085
  • [3] Direct growth of germanium and silicon nanowires on metal films
    Richards, Benjamin T.
    Gaskey, Bernard
    Levin, Barnaby D. A.
    Whitham, Kevin
    Muller, David
    Hanrath, Tobias
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (10) : 1869 - 1878
  • [4] Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires
    Wu, Xueyan
    Kulkarni, Jaideep S.
    Collins, Gillian
    Petkov, Nikolay
    Almecija, Dorothee
    Boland, John J.
    Erts, Donats
    Holmes, Justin D.
    [J]. CHEMISTRY OF MATERIALS, 2008, 20 (19) : 5954 - 5967
  • [5] Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms
    Huang, J. Q.
    Chiam, S. Y.
    Chim, W. K.
    Wong, L. M.
    Wang, S. J.
    [J]. NANOTECHNOLOGY, 2009, 20 (42)
  • [6] Structural properties of silicon-germanium and germanium-silicon core-shell nanowires
    O'Rourke, Conn
    Mujahed, Shereif Y.
    Kumarasinghe, Chathurangi
    Miyazaki, Tsuyoshi
    Bowler, David R.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 30 (46)
  • [7] Self-assembled and ordered growth of silicon and germanium nanowires
    Kramer, Andrea
    Albrecht, Martin
    Boeck, Torsten
    Remmele, Thilo
    Schramm, Peter
    Fornari, Roberto
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (1-2) : 277 - 285
  • [8] First-principles optical properties of silicon and germanium nanowires
    Bruno, M.
    Palummo, M.
    Ossicini, S.
    Del Sole, R.
    [J]. SURFACE SCIENCE, 2007, 601 (13) : 2707 - 2711
  • [9] Growth and properties of InGaAs nanowires on silicon
    Koblmueller, Gregor
    Abstreiter, Gerhard
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (01): : 11 - 30
  • [10] Vapor-liquid-solid growth of silicon-germanium nanowires
    Lew, KK
    Pan, L
    Dickey, EC
    Redwing, JM
    [J]. ADVANCED MATERIALS, 2003, 15 (24) : 2073 - +