A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction

被引：0
|
作者：
Zhaolin Yuan
Junsheng Yu
Wenming Ma
Yadong Jiang
机构：
[1] University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information
来源：
Applied Physics A | 2012年 / 106卷
关键词：
Nanowire Array; Rectification Ratio; Regioregular Poly; P3HT Layer; High Rectification Ratio;
D O I：
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学科分类号：
摘要：
A photodiode was fabricated based on well-aligned ZnO nanowire arrays (ZNAs) and regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) hybrid heterojunction. The current–voltage (I–V) characteristics of ITO/ZNAs/P3HT/Ag device in the dark and under illumination with a solar simulator were investigated in detail. The results demonstrated that the device showed good diode characteristics in the dark and under illumination. The device exhibited a high rectification ratio (RR) of 3211 at 2 V and a low turn-on voltage of 0.5 V in the dark. Also, the RR of the device as a function of illumination intensity was observed, and the transportation process of charge carriers in the diode under illumination was illuminated in terms of energy band diagram.
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页码：511 / 515
页数：4
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