X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer

被引:0
|
作者
M. S. Folomeshkin
Yu. A. Volkovsky
P. A. Prosekov
G. B. Galiev
E. A. Klimov
A. N. Klochkov
S. S. Pushkarev
A. Yu. Seregin
Yu. V. Pisarevsky
A. E. Blagov
M. V. Kovalchuk
机构
[1] Shubnikov Institute of Crystallography,
[2] Federal Scientific Research Centre “Crystallography and Photonics,undefined
[3] ” Russian Academy of Sciences,undefined
[4] National Research Centre “Kurchatov Institute”,undefined
[5] Mokerov Institute of Ultra High Frequency Semiconductor Electronics,undefined
[6] Russian Academy of Sciences,undefined
[7] St. Petersburg State University,undefined
来源
Crystallography Reports | 2022年 / 67卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:317 / 322
页数:5
相关论文
共 50 条
  • [1] X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer
    Folomeshkin, M. S.
    Volkovsky, Yu A.
    Prosekov, P. A.
    Galiev, G. B.
    Klimov, E. A.
    Klochkov, A. N.
    Pushkarev, S. S.
    Seregin, A. Yu
    Pisarevsky, Yu, V
    Blagov, A. E.
    Kovalchuk, M., V
    CRYSTALLOGRAPHY REPORTS, 2022, 67 (03) : 317 - 322
  • [2] Material and Device Characteristics of Metamorphic In0.53Ga0.47As MOSHEMTs Grown on GaAs and Si Substrates by MOCVD
    Li, Qiang
    Zhou, Xiuju
    Tang, Chak Wah
    Lau, Kei May
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (12) : 4112 - 4118
  • [3] Carrier lifetime of low-temperautre-grown In0.53Ga0.47As on GaAs using an InGaAlAs metamorphic buffer
    Jo, SJ
    Ihn, SG
    Lee, GJ
    Lee, DH
    Song, JI
    2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 175 - 177
  • [4] DC and microwave characteristics of metamorphic InP/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
    Wang, H
    Ng, GI
    Zheng, HQ
    Chua, LH
    Xiong, YZ
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 235 - 238
  • [5] DC and microwave characteristics of metamorphic InP/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
    Wang, Hong
    Ng, Geok Ing
    Zheng, Haiqun
    Chua, Lye Heng
    Xiong, Yong Zhong
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 235 - 238
  • [6] Electrical and structural properties of low-temperature-grown In0.53Ga0.47As on GaAs using an InGaAlAs metamorphic buffer
    Jo, Seong June
    Ihn, Soo-Ghang
    Kim, Tae-Woo
    Yee, Ki-Ju
    Hwang, Moon-Seop
    Lee, Dong-Han
    Song, Jong-In
    GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, 2005, : 425 - 427
  • [7] Ordering of In and Ga in epitaxially grown In0.53Ga0.47As films on (001)InP substrates
    Shin, Keesam
    Yoo, Junghoon
    Joo, Sungwook
    Mori, Takahiro
    Shindo, Daisuke
    Hanada, Takashi
    Makino, Hisao
    Cho, Meoungwhan
    Yao, Takafumi
    Park, Young-Gil
    MATERIALS TRANSACTIONS, 2006, 47 (04) : 1115 - 1120
  • [8] In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD
    Zhou, Xiuju
    Tang, Chak Wah
    Li, Qiang
    Lau, Kei May
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (07): : 1380 - 1383
  • [9] Microwave noise performance of metamorphic InP/In0.53Ga0.47As/InP DHBT on GaAs substrates
    Xiong, YZ
    Ng, GI
    Wang, H
    Fu, JS
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2002, 33 (04) : 306 - 308
  • [10] Metamorphic In0.53Ga0.47As/In0.52Al0.48As tunnel diodes grown on GaAs
    Lewis, JH
    Pitts, B
    Deshpande, MR
    El-Zein, N
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 143 - 148