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- [3] Carrier lifetime of low-temperautre-grown In0.53Ga0.47As on GaAs using an InGaAlAs metamorphic buffer 2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 175 - 177
- [4] DC and microwave characteristics of metamorphic InP/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates 2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 235 - 238
- [5] DC and microwave characteristics of metamorphic InP/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 235 - 238
- [6] Electrical and structural properties of low-temperature-grown In0.53Ga0.47As on GaAs using an InGaAlAs metamorphic buffer GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, 2005, : 425 - 427
- [8] In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (07): : 1380 - 1383
- [10] Metamorphic In0.53Ga0.47As/In0.52Al0.48As tunnel diodes grown on GaAs 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 143 - 148