Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells

被引：0
|
作者：
A. N. Pikhtin
O. S. Komkov
K. V. Bazarov
机构：
[1] St. Petersburg State Electrotechnical University “LETI”,
来源：
Semiconductors | 2006年 / 40卷
关键词：
78.67.De; 73.21.Fg;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of external electric field on interband optical transitions in single InxGa1 − xAs/GaAs quantum wells is studied by electroreflectance spectroscopy. A procedure is suggested for separating the contribution of particular exciton transitions to the complicated modulation spectrum. Nontrivial field dependences of the probability of optical transitions forbidden by the symmetry are observed experimentally. The data are compared with the corresponding theoretical dependences. The strength of the internal electric field in the region of the quantum well is determined from Frantz-Keldysh’s oscillations. Under certain electric fields, the probability of transitions forbidden with no field is higher than the probability of transitions allowed by the symmetry.
引用
收藏
页码：592 / 597
页数：5
相关论文
共 50 条
  • [1] Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells
    Pikhtin, AN
    Komkov, OS
    Bazarov, KV
    [J]. SEMICONDUCTORS, 2006, 40 (05) : 592 - 597
  • [2] Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo- and electroreflectance methods
    Pikhtin, AN
    Komkov, OS
    Bugge, F
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (07): : 1270 - 1274
  • [3] Intersubband transitions in asymmetric quantum wells with external electric field
    Liu, Zhaoxu
    Zhu, Jun
    Ha, Sihua
    [J]. DEVELOPMENT OF INDUSTRIAL MANUFACTURING, 2014, 525 : 170 - +
  • [4] OPTICAL SPECTROSCOPY OF GAAS/GAALAS QUANTUM-WELLS UNDER AN EXTERNAL ELECTRIC-FIELD
    VINA, L
    COLLINS, RT
    MENDEZ, EE
    WANG, WI
    CHANG, LL
    ESAKI, L
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (01) : 9 - 12
  • [5] Spin dynamics of carriers in GaAs quantum wells in an external electric field
    Gerlovin, IY
    Dolgikh, YK
    Eliseev, SA
    Ovsyankin, VV
    Efimov, YP
    Ignatiev, IV
    Petrov, VV
    Verbin, SY
    Masumoto, Y
    [J]. PHYSICAL REVIEW B, 2004, 69 (03):
  • [6] Effect of indium distribution on optical properties in InGaAs/GaAs quantum wells
    Jia G.
    Yao J.
    Shu Y.
    Xin X.
    Pi B.
    [J]. Frontiers of Optoelectronics in China, 2009, 2 (1): : 108 - 112
  • [7] Effect of indium distribution on optical properties in InGaAs/GaAs quantum wells
    Guozhi JIA
    Jianghong YAO
    Yongchun SHU
    Xiaodong XIN
    Biao PI
    [J]. Frontiers of Optoelectronics in China, 2009, 2 (01) : 108 - 112
  • [8] Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells
    Mathur, A
    Ohno, Y
    Matsukura, F
    Ohtani, K
    Akiba, N
    Kuroiwa, T
    Nakajima, H
    Ohno, H
    [J]. APPLIED SURFACE SCIENCE, 1997, 113 : 90 - 96
  • [9] EFFECT OF AN ELECTRIC-FIELD ON THE LUMINESCENCE OF GAAS QUANTUM WELLS
    MENDEZ, EE
    BASTARD, G
    CHANG, LL
    ESAKI, L
    MORKOC, H
    FISCHER, R
    [J]. PHYSICAL REVIEW B, 1982, 26 (12): : 7101 - 7104
  • [10] Calculation of electric field and optical transitions in InGaN/GaN quantum wells
    Christmas, Ursula M. E.
    Andreev, A.D.
    Faux, D.A.
    [J]. Journal of Applied Physics, 2005, 98 (07):
12345