Electric Field Effect on the Magnetic Properties of III–V Ferromagnetic Semiconductor (In,Mn)As and ((Al),Ga,Mn)As

被引：0
|
作者：
D. Chiba
M. Yamanouchi
F. Matsukura
E. Abe
Y. Ohno
K. Ohtani
H. Ohno
机构：
[1] Tohoku University,Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication
[2] Katahira 2-1-1,undefined
[3] Aoba-ku,undefined
来源：
Journal of Superconductivity | 2003年 / 16卷
关键词：
(In,Mn)As; (Ga,Mn)As; field-effect transistors; Carrier-induced ferromagnetism;
D O I：
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中图分类号：
学科分类号：
摘要：
We have investigated the magnetotransport properties of field-effect transistors (FET) having a III–V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature TC but also the magnetization and the coercive force of (In,Mn)As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn)As channel. Results on a (Al,Ga,Mn)As channel FET are also presented.
引用
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页码：179 / 182
页数：3
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