Electrical conduction of chalcogenide CuI-AgI-As2Se3 and PbI2-AgI-As2Se3 films obtained by the chemical deposition method

被引：0

作者：

D. L. Baidakov

机构：

[1] St. Petersburg State Forest-Technical University,

来源：

Glass Physics and Chemistry | 2013年 / 39卷

关键词：

chalcogenide films; chemical deposition from the organic solvent; electrical conduction; analogy of the electrical properties of films and initial chalcogenide glass;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electrical conduction of chalcogenide semiconductor CuI-AgI-As2Se3 and PbI2-AgI-As2Se3 films obtained by the chemical deposition from n-butylamine, depending on the composition of films, has been studied. It has been shown that the electrical properties of chalcogenide glass and films based on them within the experimental error are characterized by the same values. This is explained by the model of the dissolution of glasslike semiconductors in amines.

引用

页码：634 / 638

页数：4

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