Controlling boron diffusion during rapid thermal annealing with co-implantation by amphoteric impurity atoms

被引：0
|
作者：
Yu. V. Makarevich
F. F. Komarov
A. F. Komarov
A. M. Mironov
G. M. Zayats
S. A. Miskevich
机构：
[1] Sevchenko Institute of Applied Physics Problems,Institute of Mathematics
[2] National Academy of Sciences,undefined
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2012年 / 76卷 / 5期
关键词：
Boron; Impurity Atom; Rapid Thermal Annealing; Boron Atom; Boron Diffusion;
D O I：
10.3103/S1062873812050164
中图分类号：
学科分类号：
摘要：
A model for simulating the rapid thermal annealing of silicon structures implanted with boron and carbon is developed. The model provides a fair approximation of the process of boron diffusion in silicon, allowing for such effects as the electric field, the impact of the implanted carbon, and the clustering of boron. The migration process of interstitials is described according to their drift in the field of internal elastic stress.
引用
收藏
页码：574 / 576
页数：2
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