Reversible changes in the microhardness of silicon crystals under electron irradiation with low doses

被引：0
|
作者：
Yu. I. Golovin
A. A. Dmitrievskii
I. A. Pushnin
N. Yu. Suchkova
机构：
[1] Tambov State University,
来源：
Physics of the Solid State | 2004年 / 46卷
关键词：
Spectroscopy; Silicon; State Physics; Silicon Crystal; Electron Irradiation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Reversible softening of silicon single crystals under β irradiation with low doses (D<1 cGy) is revealed. The peaks observed in the dependence of the microhardness of silicon on the fluence are explained by the multistage competing processes of transformations of radiation-induced defects.
引用
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页码：1851 / 1853
页数：2
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