Effect of Te on the self-activated emission of ZnSe

被引：0
|
作者：
N. K. Morozova
D. A. Mideros
机构：
[1] Moscow Power Engineering Institute (Technical University),
来源：
Semiconductors | 2008年 / 42卷
关键词：
71.23.An; 71.55.Gs; 78.55.Et;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An interpretation of the optical properties of ZnSe is suggested. The interpretation is based on the anticrossing band theory, which specifies the oxygen-induced splitting of the conduction band. It is shown that the new approach provides a means for understanding the specific features of the self-activated luminescence in ZnSe:O and (ZnSe:O):Te. The effect of small (<1%) Te additives on the luminescence of ZnSe:Te in the edge spectral region is interpreted. The model of electronic transitions is presented.
引用
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页码：1499 / 1502
页数：3
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