Modeling of Electrical Characteristics of Thin-Film Transistors Based P3HT:ZnO Blend: Channel Length Layer Effect

被引：0
|
作者：
M. Erouel
S. Mansouri
M. Ba
A. Romero
J. A. Jiménez-Tejada
L. El Mir
机构：
[1] Gabes University,Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes
[2] Kairouan University,Faculty of Sciences and Techniques of Sidi Bouzid
[3] Universidad de Granada,Departamento de Electrónica Y Tecnología de Computadores, CITIC
来源：
Journal of Electronic Materials | 2023年 / 52卷
关键词：
TFT-P3HT:ZnO blend; channel length effect; DOS-TFT, electrical parameters performance; generic drift model;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5315 / 5326
页数：11
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