Laser annealing of sputter-deposited a-SiC and a-SiCxNy films

被引：0
|
作者：
M. A. Fraga
M. Massi
I. C. Oliveira
F. D. Origo
W. Miyakawa
机构：
[1] Technological Institute of Aeronautics,Plasmas and Processes Laboratory
[2] Institute for Advanced Studies,undefined
来源：
Bulletin of Materials Science | 2011年 / 34卷
关键词：
Silicon carbide; silicon carbonitride; amorphous films; sputtering; laser annealing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This work describes the laser annealing of a-SiC and a-SiCxNy films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of a-SiCxNy thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiCxNy films.
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页码：1375 / 1378
页数：3
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