Effect of impurities on radiation-induced defect generation in BaFI crystals

被引：0
|
作者：
I. Nuritdinov
B. T. Atashov
A. B. Uteniyazova
机构：
[1] Academy of Sciences of Uzbekistan,Institute of Nuclear Physics
[2] Uzbekistan State Institute of Arts and Culture,undefined
[3] Berdakh State University,undefined
[4] Ajiniyaz State Pedagogical Institute,undefined
来源：
Inorganic Materials | 2014年 / 50卷
关键词：
Gamma Irradiation; Optical Absorption Spectrum; Uzbekistan; Glow Curve; Undoped Sample;
D O I：
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中图分类号：
学科分类号：
摘要：
We have studied radiation-induced defect formation processes in gamma-irradiated BaFI crystals doped with Eu, W, and Tl and compared them with those in unirradiated BaFI. The results demonstrate that the radiation-induced defect formation processes in the Eu- and W-doped crystals differ insignificantly from those in the undoped samples. In the Tl-doped crystals, the radiation-induced formation of native and extrinsic defects undergoes drastic changes because of the competition between native anion vacancies and Tl2+ dopant ions for electron capture.
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页码：528 / 531
页数：3
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